6inch N-type 4H-SiC substrate
6inch N-type 4H-SiC substrate

6inch N-type 4H-SiC substrate

Crystal form: 4H
Diameter: (150 ± 0.2) mm
Thickness: (350 ± 25) μm
Conductivity type: n-type
Doping element: Nitrogen
Edge removal: 3mm
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4inch 6inch 4H-SiC seed wafer
4inch 6inch 4H-SiC seed wafer

4inch 6inch 4H-SiC seed wafer

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Special size customization of special-shaped silicon carbide substrate
Special size customization of special-shaped silicon carbide substrate

Special size customization of special-shaped silicon carbide substrate

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4inch Semi-insulating 4H-SiC wafer
4inch Semi-insulating 4H-SiC wafer

4inch Semi-insulating 4H-SiC wafer

Crystal form: 4H
Diameter: (100.0 + 0.0/-0.5) m
Thickness: (500.0 ± 25.0) μm
Conductivity type: semi-insulating
Doping elements:-
Edge removal: 3mm
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