SUBSTRATE PROPERTY

6inch N-type 4H-SiC wafer

Grade

“P”  production

“R”  research

“D”  dummy

Polytype

4H

Diameter

(150.0±0.2) mm

Thickness

(350 ± 25) μm

(500 ± 25) μm

Carrier Type

N-type

Dopant

Nitrogen

Resistivity (RT)

(0.015 – 0.028)Ω·cm

(0.015 – 0.028)Ω·cm

75%area: (0.015 – 0.028)Ω·cm

Surface Roughness

≤ 0.3 nm (Si-face CMP);  ≤1 nm (C- face Optical polish)

Surface Finish

Double face polished, Si face CMP

XRD FWHM

≤60 arcsec

Micropipe Density

≤0.5cm^-2

≤2cm^-2

≤20cm^-2

TTV

≤10μm

≤15μm
≤10μm

LTV (10mm2)

≤ 3um

≤ 5um

Bow

≤ 30μm

≤ 40μm

Warp

≤40μm

≤60μm

Surface Orientation

{0001}± 0.2°

Off axis

4° toward [11-20] ± 0.5°

Primary flat orientation

[11-20] ± 5.0°

Primary flat length

47.5 mm±2.0mm

Secondary flat orientation

NA
from Prime flat ±5.0°

Secondary flat length

NA

Packaging

Single wafer box or multi wafer box

Cracks by high intensity light

None

None

Cumulative length≤20mm，
single length≤2mm

Hex Plates by high intensity light

None

≤100um Qty. ≤10

Cumulative area≤5%

Polytype Areas by high intensity light

None

None

Cumulative area≤5%

Visual Carbon Inclusions

Cumulative area≤0.05%

Cumulative area≤3%

Cumulative area≤10%

Scratches by high intensity light

None

Cumulative length
≤1 x wafer diameter, Qty≤5

Cumulative length
≤1.5 x wafer diameter

Edge chip

None

2 allowed, ≤1mm each

5 allowed, ≤1mm each

Contamination by high intensity light

None

Edge exclusion

3mm