SUBSTRATE PROPERTY

4inch Semi-insulating 4H-SiC wafer

Grade

“P”  production

“R”  research

“D”  dummy

Polytype

4H

Diameter

(100.0±0.0/- 0.5) mm

Thickness

(500 ± 25) μm

(500 ± 25) μm

Carrier Type

Semi-insulating

Dopant

-

Resistivity (RT)

≥1E7 Ω.cm

≥1E7 Ω.cm

75% area ≥1E7 Ω.cm

Surface Roughness

≤ 0.3 nm (Si-face CMP Epi-ready);
≤1 nm (C- face Optical polish)

Surface Finish

Double face polished, Si face CMP

XRD FWHM

≤60 arcsec

≤100 arcsec

Micropipe Density

≤1cm^-2

≤5cm^-2

≤20cm^-2

TTV

≤10μm

≤10μm

LTV (10mm2)

≤ 3um

≤ 5um

Bow

≤ 25μm

≤ 30μm

Warp

≤35μm

≤45μm

Surface Orientation

{0001}± 0.2°

Off axis

-

Primary flat orientation

[11-20] ± 5.0°

Primary flat length

32.5 mm±2.0mm

Secondary flat orientation

Silicon face up: 90° CW.from prime flat ±5.0°
from Prime flat ±5.0°

Secondary flat length

18.0 mm±2.0mm

Packaging

Single wafer box or multi wafer box

Cracks by high intensity light

None

None

Cumulative length≤10mm， single length≤2mm

Hex Plates by high intensity light

None

≤100um Qty. ≤6

Cumulative area≤5%

Polytype Areas by high intensity light

None

Cumulative area≤2%

Cumulative area≤5%

Visual Carbon Inclusions

Cumulative area≤0.05%

Cumulative area≤3%

Cumulative area≤10%

Scratches by high intensity light

None

Cumulative length
≤1 x wafer diameter, Qty≤3

Cumulative length
≤1.5 x wafer diameter

Edge chip

None

2 allowed, ≤1mm each

5 allowed, ≤1mm each

Contamination by high intensity light

None

Edge exclusion

3mm